Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor
- Autores: Kulikov N.1, Popov V.1
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Afiliações:
- National Research Nuclear University “Moscow Engineering Physics Institute”
- Edição: Volume 53, Nº 1 (2019)
- Páginas: 110-113
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205629
- DOI: https://doi.org/10.1134/S1063782619010123
- ID: 205629
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Resumo
The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
Sobre autores
N. Kulikov
National Research Nuclear University “Moscow Engineering Physics Institute”
Email: wdpopov@mail.ru
Rússia, Moscow, 115409
V. Popov
National Research Nuclear University “Moscow Engineering Physics Institute”
Autor responsável pela correspondência
Email: wdpopov@mail.ru
Rússia, Moscow, 115409