Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor
- Авторлар: Kulikov N.1, Popov V.1
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Мекемелер:
- National Research Nuclear University “Moscow Engineering Physics Institute”
- Шығарылым: Том 53, № 1 (2019)
- Беттер: 110-113
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205629
- DOI: https://doi.org/10.1134/S1063782619010123
- ID: 205629
Дәйексөз келтіру
Аннотация
The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
Авторлар туралы
N. Kulikov
National Research Nuclear University “Moscow Engineering Physics Institute”
Email: wdpopov@mail.ru
Ресей, Moscow, 115409
V. Popov
National Research Nuclear University “Moscow Engineering Physics Institute”
Хат алмасуға жауапты Автор.
Email: wdpopov@mail.ru
Ресей, Moscow, 115409