Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
- Авторы: Abramkin D.1,2, Petrushkov M.1, Putyato M.1, Semyagin B.1, Shamirzaev T.1,2,3
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Учреждения:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Выпуск: Том 52, № 11 (2018)
- Страницы: 1484-1490
- Раздел: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204529
- DOI: https://doi.org/10.1134/S1063782618110039
- ID: 204529
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Аннотация
Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.
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Об авторах
D. Abramkin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: tim@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
M. Petrushkov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Россия, Novosibirsk, 630090
M. Putyato
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Россия, Novosibirsk, 630090
B. Semyagin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Россия, Novosibirsk, 630090
T. Shamirzaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Автор, ответственный за переписку.
Email: tim@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002