Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
- Authors: Abramkin D.S.1,2, Petrushkov M.O.1, Putyato M.A.1, Semyagin B.R.1, Shamirzaev T.S.1,2,3
-
Affiliations:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Issue: Vol 52, No 11 (2018)
- Pages: 1484-1490
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204529
- DOI: https://doi.org/10.1134/S1063782618110039
- ID: 204529
Cite item
Abstract
Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.
About the authors
D. S. Abramkin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
M. O. Petrushkov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
B. R. Semyagin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
T. S. Shamirzaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Author for correspondence.
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002