Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
- Авторы: Puzanov A.1, Obolenskiy S.1, Kozlov V.1,2
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Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Выпуск: Том 52, № 11 (2018)
- Страницы: 1407-1411
- Раздел: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204295
- DOI: https://doi.org/10.1134/S1063782618110209
- ID: 204295
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Аннотация
The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.
Об авторах
A. Puzanov
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: aspuzanov@inbox.ru
Россия, Nizhny Novgorod, 603600
S. Obolenskiy
Lobachevsky State University of Nizhny Novgorod
Email: aspuzanov@inbox.ru
Россия, Nizhny Novgorod, 603600
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: aspuzanov@inbox.ru
Россия, Nizhny Novgorod, 603600; Nizhny Novgorod, 607680