Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
- Авторы: Mnatsakanov T.1, Tandoev A.1, Levinshtein M.2, Yurkov S.1, Palmour J.3
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Учреждения:
- All-Russia Electrotechnical Institute
- Ioffe Institute
- Wolfspeed
- Выпуск: Том 51, № 8 (2017)
- Страницы: 1081-1086
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201027
- DOI: https://doi.org/10.1134/S1063782617080231
- ID: 201027
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Аннотация
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
Об авторах
T. Mnatsakanov
All-Russia Electrotechnical Institute
Автор, ответственный за переписку.
Email: mnatt@yandex.ru
Россия, Moscow, 111250
A. Tandoev
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Россия, Moscow, 111250
M. Levinshtein
Ioffe Institute
Email: mnatt@yandex.ru
Россия, St. Petersburg, 194021
S. Yurkov
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Россия, Moscow, 111250
J. Palmour
Wolfspeed
Email: mnatt@yandex.ru
США, 3026 East Cornwallis Rd., Research Triangle Park, New York, NC, 27709