Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
- Autores: Mnatsakanov T.1, Tandoev A.1, Levinshtein M.2, Yurkov S.1, Palmour J.3
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Afiliações:
- All-Russia Electrotechnical Institute
- Ioffe Institute
- Wolfspeed
- Edição: Volume 51, Nº 8 (2017)
- Páginas: 1081-1086
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201027
- DOI: https://doi.org/10.1134/S1063782617080231
- ID: 201027
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Resumo
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
Sobre autores
T. Mnatsakanov
All-Russia Electrotechnical Institute
Autor responsável pela correspondência
Email: mnatt@yandex.ru
Rússia, Moscow, 111250
A. Tandoev
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Rússia, Moscow, 111250
M. Levinshtein
Ioffe Institute
Email: mnatt@yandex.ru
Rússia, St. Petersburg, 194021
S. Yurkov
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Rússia, Moscow, 111250
J. Palmour
Wolfspeed
Email: mnatt@yandex.ru
Estados Unidos da América, 3026 East Cornwallis Rd., Research Triangle Park, New York, NC, 27709