On the crystal structure and thermoelectric properties of thin Si1–xMnx films
- Авторы: Erofeeva I.1, Dorokhin M.1, Lesnikov V.1, Zdoroveishchev A.1, Kudrin A.1, Pavlov D.1, Usov U.1
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Учреждения:
- Research Institute for Physics and Technology
- Выпуск: Том 50, № 11 (2016)
- Страницы: 1453-1457
- Раздел: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198300
- DOI: https://doi.org/10.1134/S1063782616110105
- ID: 198300
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Аннотация
Thin (25 nm) Si1–xMnx/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.
Об авторах
I. Erofeeva
Research Institute for Physics and Technology
Автор, ответственный за переписку.
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
M. Dorokhin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
V. Lesnikov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
A. Zdoroveishchev
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
A. Kudrin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
D. Pavlov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950
U. Usov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Россия, Nizhny Novgorod, 603950