On the crystal structure and thermoelectric properties of thin Si1–xMnx films
- Authors: Erofeeva I.V.1, Dorokhin M.V.1, Lesnikov V.P.1, Zdoroveishchev A.V.1, Kudrin A.V.1, Pavlov D.A.1, Usov U.V.1
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Affiliations:
- Research Institute for Physics and Technology
- Issue: Vol 50, No 11 (2016)
- Pages: 1453-1457
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198300
- DOI: https://doi.org/10.1134/S1063782616110105
- ID: 198300
Cite item
Abstract
Thin (25 nm) Si1–xMnx/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.
About the authors
I. V. Erofeeva
Research Institute for Physics and Technology
Author for correspondence.
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
M. V. Dorokhin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
V. P. Lesnikov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Zdoroveishchev
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Kudrin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
D. A. Pavlov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
U. V. Usov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950