On the crystal structure and thermoelectric properties of thin Si 1– x  Mn  x   films

I. V. Erofeeva; M. V. Dorokhin; V. P. Lesnikov; A. V. Zdoroveishchev; A. V. Kudrin; D. A. Pavlov; U. V. Usov

doi:10.1134/S1063782616110105

On the crystal structure and thermoelectric properties of thin Si_1–xMn_x films

Авторлар: Erofeeva I.¹, Dorokhin M.¹, Lesnikov V.¹, Zdoroveishchev A.¹, Kudrin A.¹, Pavlov D.¹, Usov U.¹
Мекемелер:
1. Research Institute for Physics and Technology
Шығарылым: Том 50, № 11 (2016)
Беттер: 1453-1457
Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198300
DOI: https://doi.org/10.1134/S1063782616110105
ID: 198300

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Статистика

Аннотация

Thin (25 nm) Si_1–xMn_x/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.