Informaçao sobre o Autor
Volkova, N. S.
| Edição | Seção | Título | Arquivo |
| Volume 51, Nº 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots | |
| Volume 52, Nº 6 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers | |
| Volume 52, Nº 9 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures | |
| Volume 52, Nº 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |