| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
|
| Volume 51, Nº 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
|
| Volume 52, Nº 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
|
| Volume 52, Nº 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
|
| Volume 52, Nº 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Volume 52, Nº 15 (2018) |
Erratum |
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Volume 53, Nº 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width |
|
