Informaçao sobre o Autor
Mynbaev, K.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 1 (2016) | Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures | Formation of graphite/sic structures by the thermal decomposition of silicon carbide | |
Volume 50, Nº 2 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates | |
Volume 51, Nº 2 (2017) | Physics of Semiconductor Devices | Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K | |
Volume 53, Nº 4 (2019) | Spectroscopy, Interaction with Radiation | Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies | |
Volume 53, Nº 12 (2019) | Amorphous, Vitreous, and Organic Semiconductors | Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |