Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation


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Resumo

The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.

Sobre autores

R. Zhukavin

Institute for Physics of Microstructures, Russian Academy of Sciences

Autor responsável pela correspondência
Email: zhur@ipmras.ru
Rússia, Nizhny Novgorod, 607680

S. Pavlov

Institute of Optical Sensor Systems, German Aerospace Center (DLR)

Email: zhur@ipmras.ru
Alemanha, Berlin, 12489

A. Pohl

Department of Physics, Humboldt-Universität zu Berlin

Email: zhur@ipmras.ru
Alemanha, Berlin, 12489

N. Abrosimov

Leibniz-Insitut für Kristallzüchtung (IKZ)

Email: zhur@ipmras.ru
Alemanha, Berlin, 12489

H. Riemann

Leibniz-Insitut für Kristallzüchtung (IKZ)

Email: zhur@ipmras.ru
Alemanha, Berlin, 12489

B. Redlich

Radboud University Nijmegen, Institute for Molecules and Materials, FELIX Laboratory

Email: zhur@ipmras.ru
Países Baixos, ED Nijmegen, 6525

H.-W. Hübers

Institute of Optical Sensor Systems, German Aerospace Center (DLR); Department of Physics, Humboldt-Universität zu Berlin

Email: zhur@ipmras.ru
Alemanha, Berlin, 12489; Berlin, 12489

V. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: zhur@ipmras.ru
Rússia, Nizhny Novgorod, 607680


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2019

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