Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters
- Autores: Karlina L.1, Vlasov A.1, Ber B.1, Kazantsev D.1, Timoshina N.1, Kulagina M.1, Smirnov A.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 51, Nº 5 (2017)
- Páginas: 667-671
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199928
- DOI: https://doi.org/10.1134/S1063782617050116
- ID: 199928
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Resumo
The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a p-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a p–n junction significantly affects the characteristics of the obtained devices.
Sobre autores
L. Karlina
Ioffe Institute
Autor responsável pela correspondência
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
B. Ber
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Kazantsev
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Timoshina
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Rússia, St. Petersburg, 194021