Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters
- Авторы: Karlina L.1, Vlasov A.1, Ber B.1, Kazantsev D.1, Timoshina N.1, Kulagina M.1, Smirnov A.1
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Учреждения:
- Ioffe Institute
- Выпуск: Том 51, № 5 (2017)
- Страницы: 667-671
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199928
- DOI: https://doi.org/10.1134/S1063782617050116
- ID: 199928
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Аннотация
The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a p-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a p–n junction significantly affects the characteristics of the obtained devices.
Об авторах
L. Karlina
Ioffe Institute
Автор, ответственный за переписку.
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
B. Ber
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
D. Kazantsev
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Timoshina
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021