Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
- Autores: Lovygin M.1, Borgardt N.1, Bugaev A.2, Volkov R.1, Seibt M.3
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Afiliações:
- National Research University of Electronic Technology MIET
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- IV Physical Institute
- Edição: Volume 50, Nº 13 (2016)
- Páginas: 1753-1758
- Seção: Methods and Technique of Measurements
- URL: https://journals.rcsi.science/1063-7826/article/view/199249
- DOI: https://doi.org/10.1134/S1063782616130066
- ID: 199249
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Resumo
The results of electron microscopy studies of an epitaxial InAlAs layer on a GaAs(100) substrate are reported. It is established that there exist misfit dislocations at the interface between the materials and there are residual strains distorting the lattice in the layer. From the measurements of lattice parameters in the directions parallel and orthogonal to the growth direction away from misfit dislocations, the local nominal lattice parameter of the layer is calculated and the relative content of indium is determined.
Sobre autores
M. Lovygin
National Research University of Electronic Technology MIET
Autor responsável pela correspondência
Email: lemi@miee.ru
Rússia, Zelenograd, Moscow, 124498
N. Borgardt
National Research University of Electronic Technology MIET
Email: lemi@miee.ru
Rússia, Zelenograd, Moscow, 124498
A. Bugaev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: lemi@miee.ru
Rússia, Moscow, 117105
R. Volkov
National Research University of Electronic Technology MIET
Email: lemi@miee.ru
Rússia, Zelenograd, Moscow, 124498
M. Seibt
IV Physical Institute
Email: lemi@miee.ru
Alemanha, Gottingen, D-37077