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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Browse Section Index > Methods and Technique of Measurements

Methods and Technique of Measurements

Issue Title File
Vol 51, No 13 (2017) Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra PDF
(Eng)
Belov A.G., Denisov I.A., Kanevskii V.E., Pashkova N.V., Lysenko A.P.
Vol 50, No 13 (2016) Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy PDF
(Eng)
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
Vol 50, No 13 (2016) Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals PDF
(Eng)
Usanov D.A., Nikitov S.A., Skripal A.V., Ponomarev D.V., Latysheva E.V.
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