On the crystal structure and thermoelectric properties of thin Si1–xMnx films
- Autores: Erofeeva I.1, Dorokhin M.1, Lesnikov V.1, Zdoroveishchev A.1, Kudrin A.1, Pavlov D.1, Usov U.1
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Afiliações:
- Research Institute for Physics and Technology
- Edição: Volume 50, Nº 11 (2016)
- Páginas: 1453-1457
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198300
- DOI: https://doi.org/10.1134/S1063782616110105
- ID: 198300
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Resumo
Thin (25 nm) Si1–xMnx/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.
Sobre autores
I. Erofeeva
Research Institute for Physics and Technology
Autor responsável pela correspondência
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
M. Dorokhin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
V. Lesnikov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
A. Zdoroveishchev
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
A. Kudrin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
D. Pavlov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950
U. Usov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Rússia, Nizhny Novgorod, 603950