Simulation of the real efficiencies of high-efficiency silicon solar cells
- Autores: Sachenko A.1, Skrebtii A.2, Korkishko R.1, Kostylyov V.1, Kulish N.1, Sokolovskyi I.1
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Afiliações:
- Lashkaryov Institute of Semiconductor Physics
- University of Ontario Institute of Technology
- Edição: Volume 50, Nº 4 (2016)
- Páginas: 523-529
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197011
- DOI: https://doi.org/10.1134/S1063782616040205
- ID: 197011
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Resumo
The temperature dependences of the efficiency η of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing η with increasing temperature decreases as the surface recombination rate decreases. The photoconversion efficiency of high-efficiency silicon-based solar cells operating under natural (field) conditions is simulated. Their operating temperature is determined self-consistently by simultaneously solving the photocurrent, photovoltage, and energy-balance equations. Radiative and convective cooling mechanisms are taken into account. It is shown that the operating temperature of solar cells is higher than the ambient temperature even at very high convection coefficients (~300 W/m2 K). Accordingly, the photoconversion efficiency in this case is lower than when the temperature of the solar cells is equal to the ambient temperature. The calculated dependences for the open-circuit voltage and the photoconversion efficiency of high-quality silicon solar cells under concentrated illumination are discussed taking into account the actual temperature of the solar cells.
Sobre autores
A. Sachenko
Lashkaryov Institute of Semiconductor Physics
Autor responsável pela correspondência
Email: sach@isp.kiev.ua
Ucrânia, pr. Nauki 41, Kyiv, 03028
A. Skrebtii
University of Ontario Institute of Technology
Email: sach@isp.kiev.ua
Canadá, 2000 Simcoe Street North, Oshawa, ON, L1H 7K4
R. Korkishko
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, pr. Nauki 41, Kyiv, 03028
V. Kostylyov
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, pr. Nauki 41, Kyiv, 03028
N. Kulish
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, pr. Nauki 41, Kyiv, 03028
I. Sokolovskyi
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, pr. Nauki 41, Kyiv, 03028