Simulation of the real efficiencies of high-efficiency silicon solar cells


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Abstract

The temperature dependences of the efficiency η of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing η with increasing temperature decreases as the surface recombination rate decreases. The photoconversion efficiency of high-efficiency silicon-based solar cells operating under natural (field) conditions is simulated. Their operating temperature is determined self-consistently by simultaneously solving the photocurrent, photovoltage, and energy-balance equations. Radiative and convective cooling mechanisms are taken into account. It is shown that the operating temperature of solar cells is higher than the ambient temperature even at very high convection coefficients (~300 W/m2 K). Accordingly, the photoconversion efficiency in this case is lower than when the temperature of the solar cells is equal to the ambient temperature. The calculated dependences for the open-circuit voltage and the photoconversion efficiency of high-quality silicon solar cells under concentrated illumination are discussed taking into account the actual temperature of the solar cells.

About the authors

A. V. Sachenko

Lashkaryov Institute of Semiconductor Physics

Author for correspondence.
Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028

A. I. Skrebtii

University of Ontario Institute of Technology

Email: sach@isp.kiev.ua
Canada, 2000 Simcoe Street North, Oshawa, ON, L1H 7K4

R. M. Korkishko

Lashkaryov Institute of Semiconductor Physics

Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028

V. P. Kostylyov

Lashkaryov Institute of Semiconductor Physics

Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028

N. R. Kulish

Lashkaryov Institute of Semiconductor Physics

Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028

I. O. Sokolovskyi

Lashkaryov Institute of Semiconductor Physics

Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028


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