Автор туралы ақпарат

Khrykin, O.

Шығарылым	Бөлім	Атауы	Файл
Том 50, № 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Том 50, № 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Том 51, № 8 (2017)	Erratum	Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Том 51, № 11 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Low-temperature deposition of SiN_x Films in SiH₄/Ar + N₂ inductively coupled plasma under high silane dilution with argon
Том 52, № 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire