Автор туралы ақпарат
Serin, A. A.
Шығарылым | Бөлім | Атауы | Файл |
Том 52, № 10 (2018) | Physics of Semiconductor Devices | Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates | |
Том 52, № 11 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides | |
Том 52, № 14 (2018) | Lasers and Optoelectronic Devices | Diode Lasers with Near-Surface Active Region | |
Том 53, № 2 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |