Author Details
Serin, A. A.
Issue | Section | Title | File |
Vol 52, No 10 (2018) | Physics of Semiconductor Devices | Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates | |
Vol 52, No 11 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides | |
Vol 52, No 14 (2018) | Lasers and Optoelectronic Devices | Diode Lasers with Near-Surface Active Region | |
Vol 53, No 2 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |