| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Том 50, № 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
|
| Том 51, № 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
|
| Том 51, № 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
| Том 52, № 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
|
| Том 52, № 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
| Том 52, № 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| Том 52, № 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Том 53, № 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality |
|
| Том 53, № 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
| Том 53, № 14 (2019) |
Lasers and Optoelectronic Devices |
Spontaneous Emission in the Anti-Waveguiding VCSEL |
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