InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
- Авторлар: Nadtochiy A.1, Shchukin V.2, Cherkashin N.3, Denneulin T.4,3, Zhukov A.1, Maximov M.1, Gordeev N.5, Payusov A.5, Kulagina M.5, Shernyakov Y.5, Ledentsov N.2
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Мекемелер:
- St. Petersburg Academic University
- VI Systems GmbH
- CEMES-CNRS
- Peter Grünber Institut (PGI-5)
- Ioffe Institute
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1699-1704
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207414
- DOI: https://doi.org/10.1134/S1063782619160218
- ID: 207414
Дәйексөз келтіру
Аннотация
Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
Негізгі сөздер
Авторлар туралы
A. Nadtochiy
St. Petersburg Academic University
Хат алмасуға жауапты Автор.
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Shchukin
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Германия, Berlin, 10623
N. Cherkashin
CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
Франция, Cedex 4, Toulouse, 31055
T. Denneulin
Peter Grünber Institut (PGI-5); CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
Германия, Jülich, 52425; Cedex 4, Toulouse, 31055
A. Zhukov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Maximov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Gordeev
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Payusov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Shernyakov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Ledentsov
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Германия, Berlin, 10623