InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
- Авторы: Nadtochiy A.1, Shchukin V.2, Cherkashin N.3, Denneulin T.4,3, Zhukov A.1, Maximov M.1, Gordeev N.5, Payusov A.5, Kulagina M.5, Shernyakov Y.5, Ledentsov N.2
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Учреждения:
- St. Petersburg Academic University
- VI Systems GmbH
- CEMES-CNRS
- Peter Grünber Institut (PGI-5)
- Ioffe Institute
- Выпуск: Том 53, № 12 (2019)
- Страницы: 1699-1704
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207414
- DOI: https://doi.org/10.1134/S1063782619160218
- ID: 207414
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Аннотация
Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
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Об авторах
A. Nadtochiy
St. Petersburg Academic University
Автор, ответственный за переписку.
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Shchukin
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Германия, Berlin, 10623
N. Cherkashin
CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
Франция, Cedex 4, Toulouse, 31055
T. Denneulin
Peter Grünber Institut (PGI-5); CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
Германия, Jülich, 52425; Cedex 4, Toulouse, 31055
A. Zhukov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Maximov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Gordeev
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Payusov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
Yu. Shernyakov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Ledentsov
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Германия, Berlin, 10623