Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping
- Авторлар: Petrosyan S.1,2, Yesayan A.1, Nersesyan S.1, Khachatryan V.2
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Мекемелер:
- Institute of Radiophysics and Electronics, NAS RA
- Russian-Armenian (Slavonic) University
- Шығарылым: Том 52, № 16 (2018)
- Беттер: 2022-2025
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205278
- DOI: https://doi.org/10.1134/S1063782618160236
- ID: 205278
Дәйексөз келтіру
Аннотация
We have presented a simple analytical model for estimating critical radius of full depletion in semiconductor nanowires due to charge carrier transport from volume to the surface states and radial band bending associated with screening of trapped surface charges. The model describes the critical radius functional dependences on doping level, surface states parameters and appears as a very useful tool to understand transport properties of nanowires limited particularly by surface states effects.
Негізгі сөздер
Авторлар туралы
S. Petrosyan
Institute of Radiophysics and Electronics, NAS RA; Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
Армения, Ashtarak, 0203; Yerevan, 0051
A. Yesayan
Institute of Radiophysics and Electronics, NAS RA
Email: suren.nersesyan@rambler.ru
Армения, Ashtarak, 0203
S. Nersesyan
Institute of Radiophysics and Electronics, NAS RA
Хат алмасуға жауапты Автор.
Email: suren.nersesyan@rambler.ru
Армения, Ashtarak, 0203
V. Khachatryan
Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
Армения, Yerevan, 0051