Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping
- 作者: Petrosyan S.1,2, Yesayan A.1, Nersesyan S.1, Khachatryan V.2
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隶属关系:
- Institute of Radiophysics and Electronics, NAS RA
- Russian-Armenian (Slavonic) University
- 期: 卷 52, 编号 16 (2018)
- 页面: 2022-2025
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205278
- DOI: https://doi.org/10.1134/S1063782618160236
- ID: 205278
如何引用文章
详细
We have presented a simple analytical model for estimating critical radius of full depletion in semiconductor nanowires due to charge carrier transport from volume to the surface states and radial band bending associated with screening of trapped surface charges. The model describes the critical radius functional dependences on doping level, surface states parameters and appears as a very useful tool to understand transport properties of nanowires limited particularly by surface states effects.
作者简介
S. Petrosyan
Institute of Radiophysics and Electronics, NAS RA; Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
亚美尼亚, Ashtarak, 0203; Yerevan, 0051
A. Yesayan
Institute of Radiophysics and Electronics, NAS RA
Email: suren.nersesyan@rambler.ru
亚美尼亚, Ashtarak, 0203
S. Nersesyan
Institute of Radiophysics and Electronics, NAS RA
编辑信件的主要联系方式.
Email: suren.nersesyan@rambler.ru
亚美尼亚, Ashtarak, 0203
V. Khachatryan
Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
亚美尼亚, Yerevan, 0051