Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection
- Авторлар: Polischuk O.1, Fateev D.1, Popov V.1,2
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Мекемелер:
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Saratov State University
- Шығарылым: Том 52, № 12 (2018)
- Беттер: 1534-1539
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204665
- DOI: https://doi.org/10.1134/S1063782618120187
- ID: 204665
Дәйексөз келтіру
Аннотация
The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated p- and n-type regions in a periodic p–i–n structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.
Негізгі сөздер
Авторлар туралы
O. Polischuk
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: polischuk.sfire@mail.ru
Ресей, Saratov, Saratov Branch, 410019
D. Fateev
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: popov_slava@yahoo.co.uk
Ресей, Saratov, Saratov Branch, 410019
V. Popov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Saratov State University
Хат алмасуға жауапты Автор.
Email: popov_slava@yahoo.co.uk
Ресей, Saratov, Saratov Branch, 410019; Saratov, 410012