Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection
- 作者: Polischuk O.1, Fateev D.1, Popov V.1,2
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Saratov State University
- 期: 卷 52, 编号 12 (2018)
- 页面: 1534-1539
- 栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204665
- DOI: https://doi.org/10.1134/S1063782618120187
- ID: 204665
如何引用文章
详细
The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated p- and n-type regions in a periodic p–i–n structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.
作者简介
O. Polischuk
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: polischuk.sfire@mail.ru
俄罗斯联邦, Saratov, Saratov Branch, 410019
D. Fateev
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: popov_slava@yahoo.co.uk
俄罗斯联邦, Saratov, Saratov Branch, 410019
V. Popov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Saratov State University
编辑信件的主要联系方式.
Email: popov_slava@yahoo.co.uk
俄罗斯联邦, Saratov, Saratov Branch, 410019; Saratov, 410012