Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
- Авторлар: Anisimov A.1, Wolfson A.1, Mokhov E.2
-
Мекемелер:
- Ioffe Institute
- ITMO University
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1225-1227
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204099
- DOI: https://doi.org/10.1134/S1063782618090026
- ID: 204099
Дәйексөз келтіру
Аннотация
The Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase epitaxy (CHVPE) techniques.
Авторлар туралы
A. Anisimov
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Wolfson
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
E. Mokhov
ITMO University
Хат алмасуға жауапты Автор.
Email: Mokhov@mail.ioffe.ru
Ресей, St. Petersburg, 197101