Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
- Autores: Anisimov A.1, Wolfson A.1, Mokhov E.2
-
Afiliações:
- Ioffe Institute
- ITMO University
- Edição: Volume 52, Nº 9 (2018)
- Páginas: 1225-1227
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204099
- DOI: https://doi.org/10.1134/S1063782618090026
- ID: 204099
Citar
Resumo
The Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase epitaxy (CHVPE) techniques.
Sobre autores
A. Anisimov
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Wolfson
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Rússia, St. Petersburg, 194021
E. Mokhov
ITMO University
Autor responsável pela correspondência
Email: Mokhov@mail.ioffe.ru
Rússia, St. Petersburg, 197101