Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
- 作者: Anisimov A.1, Wolfson A.1, Mokhov E.2
-
隶属关系:
- Ioffe Institute
- ITMO University
- 期: 卷 52, 编号 9 (2018)
- 页面: 1225-1227
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204099
- DOI: https://doi.org/10.1134/S1063782618090026
- ID: 204099
如何引用文章
详细
The Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase epitaxy (CHVPE) techniques.
作者简介
A. Anisimov
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Wolfson
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Mokhov
ITMO University
编辑信件的主要联系方式.
Email: Mokhov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101