Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Samsonova, T. P.
Issue
Section
Title
File
Vol 50, No 7 (2016)
Electronic Properties of Semiconductors
Field dependence of the electron drift velocity along the hexagonal axis of 4
H
-SiC
Vol 50, No 7 (2016)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Semi-insulating 4
H
-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into
n
-type epitaxial films
Vol 51, No 3 (2017)
Physics of Semiconductor Devices
Current–voltage characteristics of high-voltage 4
H
-SiC
p
+
–
n
0
–
n
+
diodes in the avalanche breakdown mode
Vol 52, No 10 (2018)
Physics of Semiconductor Devices
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4
H
-SiC Junction Diodes
Vol 52, No 12 (2018)
Physics of Semiconductor Devices
Avalanche Breakdown Stability of High Voltage (1430 V) 4
H
-SiC
p
+
–
n
0
–
n
+
Diodes
Vol 53, No 3 (2019)
Physics of Semiconductor Devices
Simulation of Transient Processes in 4
H
-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
Vol 53, No 6 (2019)
Physics of Semiconductor Devices
Correction of the Reverse Recovery Characteristics of High-Voltage 4
H
-SiC Junction Diodes Using Proton Irradiation
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