Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Sorokina, S. V.
Issue
Section
Title
File
Vol 50, No 1 (2016)
Physics of Semiconductor Devices
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
Vol 50, No 1 (2016)
Physics of Semiconductor Devices
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters
Vol 50, No 9 (2016)
Physics of Semiconductor Devices
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
Vol 50, No 10 (2016)
Physics of Semiconductor Devices
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
Vol 51, No 5 (2017)
Physics of Semiconductor Devices
Laser (λ = 809 nm) power converter based on GaAs
Vol 52, No 3 (2018)
Physics of Semiconductor Devices
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
Vol 52, No 13 (2018)
Physics of Semiconductor Devices
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)
Vol 52, No 13 (2018)
Physics of Semiconductor Devices
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation
Vol 53, No 8 (2019)
Physics of Semiconductor Devices
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
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