Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Zolotukhin, D. S.
Issue
Section
Title
File
Vol 52, No 8 (2018)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
Vol 52, No 13 (2018)
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Effect of a
por
-Si Buffer Layer on the Structure and Morphology of Epitaxial In
x
Ga
1 –
x
N/Si(111) Heterostructures
Vol 53, No 1 (2019)
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
Influence of a
por
-Si Buffer Layer on the Optical Properties of Epitaxial In
x
Ga
1 –
x
N/Si(111) Heterostructures with a Nanocolumnar Film Morphology
Vol 53, No 7 (2019)
Fabrication, Treatment, and Testing of Materials and Structures
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A
III
N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
Vol 53, No 8 (2019)
Fabrication, Treatment, and Testing of Materials and Structures
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
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