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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Kryzhanovskaya N.V., Maximov M.V., Blokhin S.A., Bobrov M.A., Kulagina M.M., Troshkov S.I., Zadiranov Y.M., Lipovskii A.A., Moiseev E.I., Kudashova Y.V., Livshits D.A., Ustinov V.M., Zhukov A.E.
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT
Swain R., Jena K., Lenka T.R.
Record Low Threshold Current Density in Quantum Dot Microdisk Laser
Moiseev E.I., Kryzhanovskaya N.V., Zubov F.I., Mikhailovskii M.S., Abramov A.N., Maximov M.V., Kulagina M.M., Guseva Y.A., Livshits D.A., Zhukov A.E.
Photoluminescence and Confinement of Excitons in Disordered Porous Films
Bondar N.V., Brodin M.S., Brodin A.M., Matveevskaya N.A.
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm
Utochkin V.V., Aleshkin V.Y., Dubinov A.A., Gavrilenko V.I., Kulikov N.S., Fadeev M.A., Rumyantsev V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V.
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
Popov V.D.
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates
Kudryatvsev K.E., Dubinov A.A., Aleshkin V.Y., Yurasov D.V., Gorlachuk P.V., Ryaboshtan Y.L., Marmalyuk A.A., Novikov A.V., Krasilnik Z.F.
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M.V., Nadtochiy A.M., Shernyakov Y.M., Payusov A.S., Vasil’ev A.P., Ustinov V.M., Serin A.A., Gordeev N.Y., Zhukov A.E.
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells
Dubinov A.A., Aleshkin V.Y., Morozov S.V.
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