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Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions
Orletskyi I.G., Ilashchuk M.I., Solovan M.N., Maryanchuk P.D., Parfenyuk O.A., Maistruk E.V., Nichyi S.V.
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
Kunitsyna E.V., Andreev I.A., Konovalov G.G., Ivanov E.V., Pivovarova A.A., Il’inskaya N.D., Yakovlev Y.P.
The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions
Zhukov A.V.
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM
Stefanovich G.B., Pergament A.L., Boriskov P.P., Kuroptev V.A., Stefanovich T.G.
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