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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K.A., Usachov D.Y.
Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity
Garibova S.N., Isayev A.I., Mekhtiyeva S.I., Atayeva S.U.
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V.Y., Jmerik V.N., Roginskii E.M., Kitaev Y.E., Beltukov Y.M., Smirnov M.B., Nechaev D.V., Smirnov A.N., Eliseyev I.A., Brunkov P.N., Ivanov S.V.
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
Shastin V.N., Zhukavin R.K., Kovalevsky K.A., Tsyplenkov V.V., Rumyantsev V.V., Shengurov D.V., Pavlov S.G., Shuman V.B., Portsel L.M., Lodygin A.N., Astrov Y.A., Abrosimov N.V., Klopf J.M., Hübers H.
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Astankova K.N., Gorokhov E.B., Azarov I.A., Volodin V.A., Latyshev A.V.
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