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Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties
Detochenko A.P., Denisov S.A., Drozdov M.N., Mashin A.I., Gavva V.A., Bulanov A.D., Nezhdanov A.V., Ezhevskii A.A., Stepikhova M.V., Chalkov V.Y., Trushin V.N., Shengurov D.V., Shengurov V.G., Abrosimov N.V., Riemann H.
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Temiryazev A.G.
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I.S., Pushkarev S.S., Grekhov M.M., Vinichenko A.N., Lavrukhin D.V., Kolentsova O.S.
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm
Pashkeev D.A., Selivanov Y.G., Chizhevskii E.G., Zasavitskiy I.I.
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