Author Details
Volkov, V. V.
Issue | Section | Title | File |
Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
Vol 52, No 10 (2018) | Physics of Semiconductor Devices | Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |