作者的详细信息
Volkov, V. V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
卷 52, 编号 10 (2018) | Physics of Semiconductor Devices | Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |