Автор туралы ақпарат
Volkov, V. V.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
Том 52, № 10 (2018) | Physics of Semiconductor Devices | Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |