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Author Details

Mansurov, V. G.

Issue Section Title File
Vol 50, No 2 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
Vol 50, No 8 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
Vol 51, No 3 (2017) Physics of Semiconductor Devices AlN/GaN heterostructures for normally-off transistors
Vol 52, No 6 (2018) Fabrication, Treatment, and Testing of Materials and Structures Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
Vol 52, No 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Formation of a Graphene-Like SiN Layer on the Surface Si(111)