Author Details
Bugrov, V. E.
| Issue | Section | Title | File |
| Vol 50, No 4 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy | |
| Vol 50, No 5 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range | |
| Vol 50, No 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates | |
| Vol 52, No 2 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |