| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
|
| Volume 51, Nº 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
|
| Volume 51, Nº 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
|
| Volume 52, Nº 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Spinodal Decomposition in InSb/AlAs Heterostructures |
|
| Volume 52, Nº 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
|
| Volume 53, Nº 5 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates |
|
| Volume 53, Nº 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
|
