| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
|
| Том 51, № 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
|
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Spinodal Decomposition in InSb/AlAs Heterostructures |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
|
| Том 53, № 5 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates |
|
| Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
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