| Issue | Section | Title | File | 
											
				| Vol 50, No 4 (2016) | Surfaces, Interfaces, and Thin Films | Induced surface states of the ultrathin Ba/3C-SiC(111) interface |  | 
												
				| Vol 50, No 10 (2016) | Surfaces, Interfaces, and Thin Films | The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |  | 
												
				| Vol 51, No 3 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |  | 
												
				| Vol 51, No 5 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |  | 
												
				| Vol 51, No 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |  | 
												
				| Vol 52, No 4 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties | Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |  | 
												
				| Vol 52, No 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology | MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |  | 
												
				| Vol 52, No 6 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |  | 
												
				| Vol 53, No 2 (2019) | Surfaces, Interfaces, and Thin Films | Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |  | 
												
				| Vol 53, No 3 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |  | 
												
				| Vol 53, No 14 (2019) | Nanostructures Characterization | Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |  |