| Issue |
Section |
Title |
File |
| Vol 50, No 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
| Vol 53, No 10 (2019) |
Surfaces, Interfaces, and Thin Films |
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope |
|
